Characterizing intrinsic charges in top gated bilayer graphene device by Raman spectroscopy
نویسندگان
چکیده
منابع مشابه
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5...
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Department of Physics, University of California, Berkeley, California 94720, USA School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Earth Sciences Division, Lawr...
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ژورنال
عنوان ژورنال: Carbon
سال: 2012
ISSN: 0008-6223
DOI: 10.1016/j.carbon.2012.03.006